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2N65 - 650V N-CHANNEL POWER MOSFET

General Description

The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A.
  • Ultra Low gate charge (typical 45nC).
  • Low reverse transfer capacitance (CRSS = typical 9 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1 TO-252D 1 TO-263 1 TO-262 1 1 TO-126 TO-126C 1 TO-126S 1.Gate 3.Source www. unisonic. com. tw Copyright © 2020 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-370.M 2N65 Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET 1 TO-220 1 1 TO-220F TO-220F1  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 1 TO-220F2 TO-220F3 TO-251 1 TO-251L 1 TO-251S 1 TO-252  FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.