2N65 - 650V N-CHANNEL POWER MOSFET

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UTC

2N65 650V N-CHANNEL POWER MOSFET by UTC - Datasheet Preview — Datasheet preview – 2N65

Datasheet Details

Part number	2N65
Manufacturer	UTC
File Size	432.56 KB
Description	650V N-CHANNEL POWER MOSFET
Datasheet	2N65 Datasheet
Additional preview pages of the 2N65 datasheet.

Product details

Description

The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Features

S.
RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A.
Ultra Low gate charge (typical 45nC).
Low reverse transfer capacitance (CRSS = typical 9 pF).
Fast switching capability.
Avalanche energy specified.
Improved dv/dt capability, high ruggedness.
SYMBOL 2.Drain 1 TO-252D 1 TO-263 1 TO-262 1 1 TO-126 TO-126C 1 TO-126S 1.Gate 3.Source www. unisonic. com. tw Copyright © 2020 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-370.M 2N65 Power MOSFET.

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Published: Dec 23, 2015 |