Datasheet4U Logo Datasheet4U.com

2N65-TC - 650V N-CHANNEL POWER MOSFET

General Description

using UTC’s advanced technology to provide customers with planar stripe and DMOS technology.

This technology allows a minimum on-state resistance and superior switching performance.

Key Features

  • RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.0A.
  • High Switching Speed.
  • SYMBOL 2.Drain Power MOSFET 1 TO-251 1 TO-251S4 1 TO-252 1.Gate 3.Source.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N65-C N-CHANNEL POWER MOSFET Unisonic Technologies
2N65 650V N-Channel Power MOSFET JINAN JINGHENG
2N65 N-CHANNEL POWER MOSFET GME
2N65 N-Channel MOSFET Transistor Inchange Semiconductor
2N650 PNP Transistor Motorola

Other Datasheets by Unisonic Technologies

Part Number Description
2N65-CB N-CHANNEL MOSFET
2N65 650V N-CHANNEL POWER MOSFET
2N65Q-TA N-CHANNEL Power MOSFET
2N60 N-CHANNEL MOSFET
2N60-C N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 2N65-TC 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65-TC is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N65-TC is generally applied in high efficiency switch mode power supplies.  FEATURES * RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.0A * High Switching Speed  SYMBOL 2.Drain Power MOSFET 1 TO-251 1 TO-251S4 1 TO-252 1.Gate 3.