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2N65 - N-CHANNEL POWER MOSFET

Key Features

  • z RDS(on)=5.0Ω@VGS=10V. Pb z Ultra Low gate charge (typical 9.0nC) Lead-free z Low reverse transfer capacitance (Crss = typical 5.0 pF) z Fast switching capability z Avalanche energy specified z Improved dv/dt capability, high ruggedness 2N65 TO-251 TO-252.

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Production specification 2A, 650 Volts N-CHANNEL POWER MOSFET FEATURES z RDS(on)=5.0Ω@VGS=10V. Pb z Ultra Low gate charge (typical 9.0nC) Lead-free z Low reverse transfer capacitance (Crss = typical 5.0 pF) z Fast switching capability z Avalanche energy specified z Improved dv/dt capability, high ruggedness 2N65 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDM VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage 650 V 2.0 A 8.0 A ±30 V IAR EAR EAS dv/dt PD Avalanche Current (Note2) 2.0 Avalanche Energy Repetitive(Note 2) 4.5 Avalanche Energy Single Pulse(Note 3) 140 Peak Diode Recovery dv/dt (Note4) 4.