Galaxy Century Microelectronics 2N65
N-CHANNEL POWER MOSFET
| Part No. | 2N65 |
|---|---|
| Datasheet | 2N65 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
z RDS(on)=5.0Ω@VGS=10V. Pb z Ultra Low gate charge (typical 9.0nC) Lead-free z Low reverse transfer capacitance (Crss = typical 5.0 pF) z Fast switching capability z Avalanche energy specified z Improved dv/dt capability, high ruggedness 2N65 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDM VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage 650 V 2.0 A 8.0 A ±30 V IAR EAR EAS dv/dt PD Avalanche Current (Note2) 2.0 Avalanche Energy Repetitive(Note 2) 4.5 Avalanche Energy Single Pulse(Note 3) 140 Peak Diode Recovery dv/dt (Note4) 4.5 Power Dissipation 35 A mJ mJ V/ns W TJ Junction Temperature +150 ℃ TOPR TSTG θJA θJc Operating and Storage Temperature Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case -55 ~ +150 50 2.87 ℃ ℃/W ℃/W Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
