2N65 Datasheet | Galaxy Microelectronics

Production specification 2A, 650 Volts N-CHANNEL POWER MOSFET Features z RDS(on)=5.0Ω@VGS=10V. Pb z Ultra Low gate charge (typical 9.0nC) Lead-free z Low reverse transfer capacitance (Crss = typical 5.0 pF) z Fast switching capability z Avalanche energy specified z Improved dv/dt capability, high ruggedness TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VDSS ID IDM VGSS Drain-Source voltage Drain current continuous Drain current Pulsed (Note2) Gate -Source voltage ±30 IAR EAR EAS dv/dt PD Avalanche Current (Note2) Avalanche Energy Repetitive(Note 2)...