2N65-C Key Features
- RDS(ON) < 5.5Ω @ VGS = 10V, ID =1A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
2N65-CB | N-CHANNEL MOSFET |
Unisonic Technologies |
2N65-TC | 650V N-CHANNEL POWER MOSFET |
JINAN JINGHENG |
2N65 | 650V N-Channel Power MOSFET |
Galaxy Microelectronics |
2N65 | N-CHANNEL POWER MOSFET |
| 2N65 | N-Channel MOSFET Transistor |