Description
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A.
- Fast switching capability.
- Avalanche energy specified.
- Improved dv/dt capability, high ruggedness.
- SYMBOL
Power MOSFET
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QW-R502-974.D
2N60-E
Power MOSFET.
2N60-E Datasheet
