2N60-E Key Features
- RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- Tape Reel
- MARKING
- Part: 2N60-E
- Description: N-CHANNEL POWER MOSFET
- Manufacturer: Unisonic Technologies
- Size: 305.68 KB
Other 2N60-E Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
2N60-C | N-CHANNEL MOSFET |
|
Unisonic Technologies |
2N60-CBS | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
2N60-F | N-CHANNEL MOSFET |
|
Unisonic Technologies |
2N60-TC | N-CHANNEL MOSFET |
| ROUM ROUM |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET |