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2N60 - N-Channel Power MOSFET

General Description

to provide enhanced voltage-blocking capability without degrading performance over time.

In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes .

Key Features

  • z Robust High Voltage Termination ! PIN3 S z Avalanche Energy Specified z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode z Diode is Character.

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Datasheet Details

Part number 2N60
Manufacturer yecheng technology
File Size 2.21 MB
Description N-Channel Power MOSFET
Datasheet download datasheet 2N60 Datasheet

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Shenzhen yecheng technology industry co.,ltd 2N60 N-Channel Power MOSFET General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.