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2N60 Datasheet

The 2N60 is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number2N60
ManufacturerWEITRON
Overview This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. T. * 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V * Low gate charge * Low Crss 1 GATE * Fast switching * Improved dv/dt capability 3 SOURCE DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) D-PAK/(TO-252) TO-220 TO-220F Maximum Ratings(T A=25 C Unless Otherwise Specified) Rating Symbol Value Unit.
Part Number2N60
Description600V N-Channel Power MOSFET
ManufacturerJINAN JINGHENG
Overview R SEMICONDUCTOR 2N60 600V N-Channel Power MOSFET FEATURES ● RDS(ON)<4.4Ω @ VGS=10V,ID=1A ● Fast switching capability ● Lead free in compliance with EU RoHS directive. ● Improved dv/dt capability,hig.
* RDS(ON)<4.4Ω @ VGS=10V,ID=1A
* Fast switching capability
* Lead free in compliance with EU RoHS directive.
* Improved dv/dt capability,high ruggedness MECHANICAL DATA PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 600 4.4 @ VGS =10V TO-220AB 2N60 ITO-220AB 2N60F ID (A) 2 TO-263 2N60D
* Case:TO-220,I.
Part Number2N60
DescriptionN-Channel Power MOSFET
ManufacturerNell Power Semiconductor
Overview The Nell 2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage o. RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) GDS TO-220AB .
Part Number2N60
DescriptionTO-251 N-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor 2N60 ·FEATURES ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·100% avalanche tested .
*Drain Current ID= 2A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching power supplies,converters,AC and DC mot.