2N60 Datasheet | WEITRON

Description : This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. 2 DRAIN Features : - 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V - Low gate charge - Low Crss 1 GATE - Fast switching - Improved dv/dt capability 3 SOURCE DRAIN SOURCE VOLTAGE 600 VOLTAGE D-PAK3/(TO-251) D-PAK/(TO-252) TO-220 TO-220F Maximum Ratings(T A=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage Gate-Source Voltage VDSS VGSS Avalanche Current - (Note 1) I AR Continuous Drain Current Pulsed Drain Current, TP Limited by TJMAX - (Note 1) Avalanche Energy, Single Pulsed (Note 2) Avalanche Energy, Repetitive, Limited by TJMAX Peak Diode Recovery dv/dt (Note 3) Total Power Dissipation 2N60P(TC=25˚C) 2N60F(TC=25˚C) 2N60I/D(TC=25˚C) 2N60P(Derate above 25°C) 2N60F(Derate above...