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2N60 - N-Channel Power MOSFET

General Description

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 2.0A, 600V,RDS(ON) =5.0 Ohms @VGS =10V.
  • Low gate charge.
  • Low Crss 1 GATE.
  • Fast switching.
  • Improved dv/dt capability 3 SOURCE DRAIN SOURCE.

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Datasheet Details

Part number 2N60
Manufacturer WEITRON
File Size 702.82 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2N60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N60 Surface Mount N-Channel Power MOSFET P b Lead(Pb)-Free DRAIN CURRENT 2 AMPERES Description: This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. 2 DRAIN Features: * 2.0A, 600V,RDS(ON) =5.