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2N60 Datasheet PDF

Nell Power Semiconductor 2N60

2N60 is a three-terminal silicon device with current conduction capability of 2A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
Part No. 2N60
Datasheet 2N60 Download
Manufacturer
Nell Power Semiconductor
Description N-Channel Power MOSFET
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2N60 datasheet page 1 preview

DESCRIPTION

The Nell threshold voltage of 4 volts.

FEATURES

RDS(ON) = 5.0Ω@VGS = 10V Ultra low gate charge(11nC max.) Low reverse transfer capacitance (CRSS = 5pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (2N60F) D D G S TO-252 (D-PAK) (2N60G) GDS TO-220AB (2N60A) GDS TO-220F (2N60AF) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 2 600 5.0 @ VGS = 10V 11 D (Drain) G (Gate) S (Source) Page 1 of 8 SEMICON
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