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2N65Z - 650V N-CHANNEL POWER MOSFET

General Description

The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • ES.
  • RDS(ON) = 5.0Ω @ VGS = 10V.
  • Ultra Low gate charge (typical 9.0nC).
  • Low reverse transfer capacitance (CRSS = typical 5.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL www. DataSheet. net/.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N65Z 2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-252 Power MOSFET „ DESCRIPTION The UTC 2N65Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220F 1 TO-220F1 „ FEATURES * RDS(ON) = 5.0Ω @ VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL www.DataSheet.