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2N65L - N-CHANNEL POWER MOSFET

General Description

The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A.
  • Ultra Low gate charge (typical 9.0nC).
  • Low reverse transfer capacitance (CRSS = typical 5.0 pF).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET www. unisonic. com. tw Copyright © 2015 Unisonic Technologies Co. , Ltd 1 of 7 QW-R502-580.E 2N65L Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N65L 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 5.0Ω @ VGS = 10V, ID =1A * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co.