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2N7002Z - N-CHANNEL POWER MOSFET

General Description

The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • Low Reverse Transfer Capacitance.
  • ESD Protected.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription for 2N7002Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N7002Z. For precise diagrams, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 2N7002Z 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(...

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ION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002ZL-AE2-R 2N7002ZG-AE2-R 2N7002ZL-K03-1006-R 2N7002ZG-K03-1006-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 DFN1006-3 Pin Assignment 123 GSD GSD Packing