3N60K-MT Key Features
- RDS(ON) < 3.2Ω @ VGS = 10 V, ID = 1.5A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: 3N60K-MT
- Description: N-CHANNEL POWER MOSFET
- Manufacturer: Unisonic Technologies
- Size: 248.78 KB
Other 3N60K-MT Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Nell Power Semiconductor |
3N60 | N-Channel Power MOSFET |
Inchange Semiconductor |
3N60 | N-Channel MOSFET Transistor |
Unisonic Technologies |
3N60-LC | 600V N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
3N60-TC2 | N-CHANNEL MOSFET |
Fairchild Semiconductor |
3N60A4 | N-Channel IGBT |