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Unisonic Technologies

3N90-E Datasheet Preview

3N90-E Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
3N90-E
3.0A, 900V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 3N90-E provides excellent RDS(ON), low gate charge
and operation with low gate voltages. This device is suitable for
use as a load switch or in PWM applications.
FEATURES
* RDS(ON) < 6.2@ VGS=10V, ID=1.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
RDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N90L-TM3-T
3N90G-TM3-T
3N90L-TMS2-T
3N90G-TMS2-T
3N90L-TMS4-T
3N90G-TMS4-T
3N90L-TN3-R
3N90G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-251
TO-251S2
TO-251S4
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 5
QW-R205-007.D




Unisonic Technologies

3N90-E Datasheet Preview

3N90-E Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

3N90-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage (VGS=0V)
VDSS 900 V
Drain-Gate Voltage (RG=20k)
VDGR 900 V
Gate-Source Voltage
VGSS ±30 V
Continuous Drain Current
ID 3 A
Pulsed Drain Current
IDM 10 A
Avalanche Current (Note 2)
IAR 3 A
Single Pulse Avalanche Energy (Note 3)
EAS
100 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.94 V/ns
Power Dissipation
PD 45 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. L = 22.2mH, IAS = 3A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD3A, di/dt200A/μs, VDDBVDSS, TJTJ(MAX).
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
110
2.77
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=900V, VGS=0V
VGS=±30V, VDS=0V
900 V
1 μA
±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance (Note)
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
VDS=15V, ID=1.5A
3.0 4.1 5.0
5.0 6.2
2.1
V
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
430 pF
47 pF
7.7 pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDD=50V, ID=1.3A, VGS=10V
VDS=30V, ID=0.5A, RG=25
19.25
5.3
5
45
56
80
52
nC
nC
nC
ns
ns
ns
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Source-Drain Current
ISD
Source-Drain Current (Pulsed)
ISDM
Diode Forward Voltage(Note)
VSD ISD=3A ,VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr VGS= 0V, IS=17A, dIF/dt=100A/μs
Qrr (Note 1)
Note: Pulse width=300μs, Duty cycle1.5%.
3A
12 A
1.6 V
530 ns
3.4 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R205-007.D


Part Number 3N90-E
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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