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3N90 - N-CHANNEL POWER MOSFET

General Description

The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • S.
  • RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.5A.
  • Fast Switching Capability.
  • Avalanche Energy Specified.
  • Improved dv/dt Capability, High Ruggedness.
  • SYMBOL Power MOSFET.

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More Datasheets from Unisonic Technologies

Part Number Description
3N90-E N-CHANNEL POWER MOSFET

Full PDF Text Transcription for 3N90 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 3N90. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD 3N90 3A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate vol...

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des excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.