3N90 Key Features
- RDS(ON) ≤ 4.8 Ω @ VGS=10V, ID=1.5A
- Fast Switching Capability
- Avalanche Energy Specified
- Improved dv/dt Capability, High Ruggedness
- SYMBOL
- RDERING INFORMATION
- MARKING
- Part: 3N90
- Manufacturer: Unisonic Technologies (official site)
- Size: 265.28 KB
Other 3N90 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
3N90 | N-Channel MOSFET Transistor |
Rectron |
3N900 | N-Channel ENHANCEMENT MODE MOSFET |
Samsung Electronics |
3N90A | Advanced Power MOSFET |
3N90 Description
The UTC 3N90 provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.