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Unisonic Technologies

4N65-C Datasheet Preview

4N65-C Datasheet

N-CHANNEL POWER MOSFET

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UNISONIC TECHNOLOGIES CO., LTD
4N65-C
4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 4N65-C is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristic. This power MOSFET is usually used in high speed
switching applications including power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 3.0@ VGS = 10 V, ID = 2A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
4N65L-TF1-T
4N65G-TF1-T
TO-220F1
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-B27.B




Unisonic Technologies

4N65-C Datasheet Preview

4N65-C Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

4N65-C
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note2)
IAR 4.0 A
Drain Current
Continuous
Pulsed (Note2)
ID
IDM
4.0
16
A
A
Avalanche Energy
Single Pulsed (Note3)
Repetitive (Note2)
EAS
EAR
150 mJ
5.6 mJ
Peak Diode Recovery dv/dt (Note4)
dv/dt
3.6 V/ns
Power Dissipation
PD 36 W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 18.75mH, IAS = 4A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD4A, di/dt 200A/μs, VDDBVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
3.47
UNIT
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-B27.B


Part Number 4N65-C
Description N-CHANNEL POWER MOSFET
Maker Unisonic Technologies
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4N65-C Datasheet PDF





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