Download 4N65-C Datasheet PDF
Unisonic Technologies
4N65-C
DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. - FEATURES - RDS(ON) < 3.0Ω @ VGS = 10 V, ID = 2A - Fast Switching Capability - Avalanche Energy Specified - Improved dv/dt Capability, High Ruggedness - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N65L-TF1-T 4N65G-TF1-T TO-220F1 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS Packing Tube - MARKING .unisonic..tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-B27.B Power MOSFET - ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source...