4N65-C - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic.

Features

S.
RDS(ON) < 3.0Ω @ VGS = 10 V, ID = 2A.
Fast Switching Capability.
Avalanche Energy Specified.
Improved dv/dt Capability, High Ruggedness.
SYMBOL Power MOSFET.

Unisonic Technologies

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Datasheet Details

Part number	4N65-C
Manufacturer	Unisonic Technologies
File Size	207.85 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	4N65-C Datasheet
Additional preview pages of the 4N65-C datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD 4N65-C 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.

Published: Feb 18, 2016 |