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7N60K-MT - N-CHANNEL POWER MOSFET

General Description

The UTC 7N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 1.4Ω @VGS = 10V, ID = 3.1A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

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Other Datasheets by Unisonic Technologies

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7N60K-MTQ N-CHANNEL POWER MOSFET
7N60K N-CHANNEL POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 7N60K-MT Preliminary 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.4Ω @VGS = 10V, ID = 3.