7N60 - N-Channel MOSFET

Inchange Semiconductor

Key Features

Drain Current.
ID= 7.4A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max).
Avalanche Energy Specified.
Fast Switching.
Simple Drive Requirements.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

7N60 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	7N60
Manufacturer	Inchange Semiconductor
File Size	225.69 KB
Description	N-Channel MOSFET
Datasheet	7N60 Datasheet

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Plused 29.6 A PD Total Dissipation @TC=25℃ 142 W Tj Max.