Datasheet Summary
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
- Features
- Drain Current ID= 7A@ TC=25℃
- Drain Source Voltage
: VDSS= 650V(Min)
- Static Drain-Source On-Resistance
: RDS(on) = 1.35Ω(Max) @VGS = 10 V
- Avalanche Energy Specified
- Fast Switching
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- High speed switching applications in power supplies
- PWM motor controls
- High efficient DC to DC converters and bridge circuits.
-...
