Inchange Semiconductor 7N65
N-Channel MOSFET
| Part No. | 7N65 |
|---|---|
| Datasheet | 7N65 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current ID= 7A@ TC=25℃●Drain Source Voltage : VDSS= 650V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) @VGS = 10 V
●Avalanche Energy Specified
●Fast Switching
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
● High speed switching applications in power supplies● PWM motor controls
● High efficient DC to DC converters and bridge circuits.
●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Plused 28 A PD Total Dissipation @TC=25℃ 142 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case 0.88 ℃/W Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE S...
