Datasheet4U Logo Datasheet4U.com

7N65 Datasheet

The 7N65 is a N-CHANNEL MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number7N65
ManufacturerCHONGQING PINGYANG
Overview 7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB.
* 7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A
* Low gate charge
* Low Ciss
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability TO-220AB 7N65 ITO-220AB 7N65F TO-263 7N65B TO-262 7N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-So.
Part Number7N65
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor 7N65 ·FEATURES ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) .
*Drain Current ID= 7A@ TC=25℃
*Drain Source Voltage : VDSS= 650V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) @VGS = 10 V
*Avalanche Energy Specified
*Fast Switching
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
* High speed swit.
Part Number7N65
Description650V N Channel Power MOSFET
ManufacturerJINAN JINGHENG
Overview R SEMICONDUCTOR 7N65 7N65F 7N65D 7N65E 7N65M 7N65N 650V N-Channel Power MOSFET FEATURES ● RDS(ON)<1.5Ω @ VGS=10V ● Fast switching capability ● Low gate charge ● Lead free in compliance with EU RoHS .
* RDS(ON)<1.5Ω @ VGS=10V
* Fast switching capability
* Low gate charge
* Lead free in compliance with EU RoHS directive.
* Green molding compound PRODUCT SUMMARY V DS (V) RDS(on) (Ω) 650 1.5 @ VGS =10V TO-220AB 7N65 ITO-220AB 7N65F ID (A) 7 TO-263 7N65D MECHANICAL DATA
* Case:TO-220,ITO-220,.
Part Number7N65
Description7A 650V N-channel Enhancement Mode Power MOSFET
ManufacturerROUM
Overview These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords wi.
* Fast Switching
* ESD Improved Capability
* Low ON Resistance(Rdson≤1.4Ω)
* Low Gate Charge(Typical Data:24nC)
* Low Reverse Transfer Capacitances(Typical:5.5pF)
* 100% Single Pulse Avalanche Energy Test
* 100% ΔVDS Test 3 Applications
* used in various power switching circuit for system miniaturiz.