Download 7N60B Datasheet PDF
Inchange Semiconductor
7N60B
FEATURES - Drain Current - ID= 7.4A@ TC=25℃ - Drain Source Voltage- : VDSS= 600V(Min) - Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) - Avalanche Energy Specified - Fast Switching - Simple Drive Requirements - DESCRITION - Designed for high efficiency switch mode power supply. - ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 ID Drain Current-Continuous 7.4 A IDM Drain Current-Single Plused 29.6 A PD Total Dissipation @TC=25℃ 142 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ - THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.88 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website:.iscsemi. 1 isc & iscsemi is registered...
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