Datasheet Details
| Part number | 7N60A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.67 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 7N60A-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N60A.
| Part number | 7N60A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 59.67 KB |
| Description | N-Channel MOSFET Transistor |
| Datasheet | 7N60A-InchangeSemiconductor.pdf |
|
|
|
·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Current-continuous@ TC=25℃ 600 ±20 7 V V A ID(puls) Pulse Drain Current 28 A Ptot Total Dissipation@TC=25℃ 60 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 7N60A SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VGS= 0;
ID=1mA VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
7N60A | N-Channel Power MOSFET | nELL |
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7N60A | N-CHANNEL MOSFET | UTC |
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7N60AF | N-Channel Power MOSFET | nELL |
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7N60 | N-Channel Power MOSFET | nELL |
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7N60 | N-CHANNEL MOSFET | UTC |
| Part Number | Description |
|---|---|
| 7N60B | N-Channel MOSFET Transistor |