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7N60A Datasheet

The 7N60A is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number7N60A
ManufacturerNell Power Semiconductor
Overview The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage o. RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(38nC max.) Low reverse transfer capacitance (CRSS = 16pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 7 VDSS (V) 600 RDS(ON) (Ω) 1.2 @ VGS = 10V .
Part Number7N60A
DescriptionN-Channel MOSFET Transistor
ManufacturerInchange Semiconductor
Overview ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALU. age VGS(th) Gate Threshold Voltage VSD Diode Forward On-Voltage VGS= 0; ID=1mA VDS= VGS; ID=250µA IS=3.5A ;VGS= 0 RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current VGS= 10V; ID=3.5A VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 MIN TYPE MAX UNIT 600 V .
Part Number7N60A
DescriptionN-CHANNEL MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand h. * VDS = 600V * ID = 7A * RDS(ON) = 1.2Ω @VGS = 10 V * Ultra low gate charge (typical 28 nC ) * Low reverse transfer Capacitance (CRSS= typical 12 pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness „ SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source .

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