Datasheet Details
| Part number | 7N60A |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 257.15 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet |
 7N60A Datasheet
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General Description
The UTC 7N60A is a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- S.
- VDS = 600V.
- ID = 7A.
- RDS(ON) = 1.2Ω @VGS = 10 V.
- Ultra low gate charge (typical 28 nC ).
- Low reverse transfer Capacitance (CRSS= typical 12 pF ).
- Fast switching capability.
- Avalanche energy tested.
- Improved dv/dt capability, high ruggedness.
- SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.