Datasheet4U Logo Datasheet4U.com

7N60-CB - N-CHANNEL MOSFET

General Description

The UTC 7N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) < 1.0Ω @ VGS = 10V, ID = 3.5A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL Power MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
7N60-F N-CHANNEL POWER MOSFET Unisonic Technologies
7N60-M N-CHANNEL POWER MOSFET Unisonic Technologies
7N60-Q N-CHANNEL POWER MOSFET Unisonic Technologies
7N60-R N-CHANNEL POWER MOSFET Unisonic Technologies
7N60 N-Channel Power MOSFET nELL

Other Datasheets by Unisonic Technologies

Part Number Description
7N60-TC N-CHANNEL MOSFET
7N60 N-CHANNEL MOSFET
7N60A N-CHANNEL MOSFET
7N60L N-CHANNEL MOSFET
7N65-CB N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
UNISONIC TECHNOLOGIES CO., LTD 7N60-CB Preliminary 7.0A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) < 1.0Ω @ VGS = 10V, ID = 3.