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7N60 Datasheet

The 7N60 is a N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number7N60
ManufacturerInchange Semiconductor
Overview isc N-Channel Mosfet Transistor INCHANGE Semiconductor 7N60 ·FEATURES ·Drain Current –ID= 7.4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Ma.
*Drain Current
  –ID= 7.4A@ TC=25℃
*Drain Source Voltage- : VDSS= 600V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max)
*Avalanche Energy Specified
*Fast Switching
*Simple Drive Requirements
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*D.
Part Number7N60
DescriptionN-Channel Power MOSFET
ManufacturerNell Power Semiconductor
Overview The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage o. RDS(ON) = 1.2Ω @ VGS = 10V Ultra low gate charge(38nC max.) Low reverse transfer capacitance (CRSS = 16pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature PRODUCT SUMMARY ID (A) 7 VDSS (V) 600 RDS(ON) (Ω) 1.2 @ VGS = 10V .
Part Number7N60
DescriptionN-CHANNEL MOSFET
ManufacturerKIA
Overview The KIA7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characterist. „ „ „ „ „ „ 6.9A, 600V, RDS(on)= 1.1Ω @ VGS= 10 V Low gate charge ( typical 32nC) Low crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 7 KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 7N60 4. Absolute.
Part Number7N60
DescriptionN-CHANNEL MOSFET
ManufacturerUnisonic Technologies
Overview The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara. * RDS(ON) < 1.0Ω @ VGS = 10V * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 7N60L-TA3-T 7N60G-TA3-T TO-220 7N60L-TF3-T 7N60G-TF3-T TO-220F 7N60.