9N70 Datasheet, Unisonic Technologies

* RDS(ON) <1.3Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 10 pF) * High switching Speed * 100% avalanche tested * Improved dv/dt capability
* S.

* FEATURES * RDS(ON) <1.3Ω@VGS =10V * Low gate charge ( typical 44 nC) * Low Crss ( typical 10 pF) * High switching.

The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used.