9N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary .
P9N70 - SSFP9N70
SSFP9N70 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G.9N70 - N-CHANNEL POWER MOSFET
9N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary 9A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N70 is a high voltage and high current power.SSM09N70GP-A - N-channel Enhancement-mode Power MOSFET
SSM09N70GP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 650V R DS(ON) 0.75Ω I D 9A Pb-free; RoHS-compliant TO-220 G D S TO-.TMPF9N70G - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP9N70(.TMPF9N70 - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP9N70(.TMP9N70 - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP9N70(.AP09N70I-A-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70I-A-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ 100% Avalanche Test ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Complian.AP09N70R - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70P/R Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S S N.AP09N70R-A - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP09N70R-A Pb Free Plating Product Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Dri.09N70P - AP09N70P
AP09N70P/R Advanced Power Electronics Corp. ▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement GG S S N.AOT9N70 - 9A N-Channel MOSFET
AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high v.GPT09N70 - POWER FIELD EFFECT TRANSISTOR
GPT09N70 / GPT09N70D POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to pro.AOB9N70L - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOB9N70L FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=700V(Min) ·Static Drain-Source On-Resi.AOT9N70 - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOT9N70 FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=700V(Min) ·Static Drain-Source On-Resis.AOTF9N70L - N-Channel MOSFET
isc N-Channel MOSFET Transistor AOTF9N70L FEATURES ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=700V(Min) ·Static Drain-Source On-Res.ISL9N7030BLP3 - N-Channel Power MOSFET
ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet January2002 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power MOSFETs This device employs a.ISL9N7030BLS3ST - N-Channel Power MOSFET
ISL9N7030BLP3, ISL9N7030BLS3ST Data Sheet January2002 30V, 0.009 Ohm, 75A, N-Channel Logic Level UltraFET® Trench Power MOSFETs This device employs a.TMP9N70G - N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMP9N70(.G2U09N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : G2U09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/7.GE09N70 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE : GE09N70 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 600/650/70.