UF830K Key Features
- RDS(ON)<1.5Ω @ ID=2.5A
- Single Pulse Avalanche Energy Rated
- Rugged- SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION
- MARKING INFORMATION
- Part: UF830K
- Manufacturer: Unisonic Technologies (official site)
- Size: 259.04 KB
Other UF830K Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Unisonic Technologies |
UF830K-MT | N-CHANNEL POWER MOSFET |
Microsemi |
UF830 | ULTRA FAST RECOVERY RECTIFIER |
|
Unisonic Technologies |
UF830 | N-CHANNEL POWER MOSFET |
|
Unisonic Technologies |
UF830Z | N-CHANNEL POWER MOSFET |
UF830K Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.