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UF830Z - N-CHANNEL POWER MOSFET

General Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers.

Key Features

  • RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V.
  • Single Pulse Avalanche Energy Rated.
  • Rugged- SOA is Power Dissipation Limited.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • ESD Protected.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UF830Z 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers.  FEATURES * RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * ESD Protected  SYMBOL 2.Drain Power MOSFET 1.Gate 3.