Download UF830Z Datasheet PDF
Unisonic Technologies
UF830Z
UF830Z is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers. - FEATURES - RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V - Single Pulse Avalanche Energy Rated - Rugged- SOA is Power Dissipation Limited - Fast Switching Speeds - Linear Transfer Characteristics - High Input Impedance - ESD Protected - SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source - ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830ZL-TF3-T UF830ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube UF830ZL-TF3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TF3: TO-220F (3) L: Lead Free, G: Halogen Free and Lead Free - MARKING .unisonic..tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-612.B Power MOSFET - ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C...