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UF830Z - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers.

Features

  • RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V.
  • Single Pulse Avalanche Energy Rated.
  • Rugged- SOA is Power Dissipation Limited.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • ESD Protected.
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Datasheet Details

Part number UF830Z
Manufacturer UTC
File Size 264.13 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet UF830Z Datasheet
Additional preview pages of the UF830Z datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UF830Z 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers.  FEATURES * RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * ESD Protected  SYMBOL 2.Drain Power MOSFET 1.Gate 3.
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