UF830Z Overview
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers.
UF830Z Key Features
- RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V
- Single Pulse Avalanche Energy Rated
- Rugged- SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- ESD Protected
- SYMBOL
- ORDERING INFORMATION
- MARKING
