UF830-CB Description
The UTC UF830-CB is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF830-CB Key Features
- RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.5 A
- Single Pulse Avalanche Energy Rated
- Rugged- SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
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- ORDERING INFORMATION