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UF830-CB - N-CHANNEL POWER MOSFET

General Description

The UTC UF830-CB is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Key Features

  • S.
  • RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.5 A.
  • Single Pulse Avalanche Energy Rated.
  • Rugged- SOA is Power Dissipation Limited.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • SYMBOL Power MOSFET.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UF830-CB Preliminary 4.5A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF830-CB is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON) < 1.5Ω @ VGS = 10V, ID = 2.