UF830 Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF830 Key Features
- RDS(ON)<1.5Ω @ VGS=10V
- Single Pulse Avalanche Energy Rated
- Rugged- SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION
- MARKING