UF830 Datasheet | Unisonic Technologies

DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. - FEATURES - RDS(ON)<1.5Ω @ VGS=10V - Single Pulse Avalanche Energy Rated - Rugged- SOA is Power Dissipation Limited - Fast Switching Speeds - Linear Transfer Characteristics - High Input Impedance - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830L-TA3-T UF830G-TA3-T UF830L-TF3-T UF830G-TF3-T UF830L-TF1-T UF830G-TF1-T UF830L-TF2-T UF830G-TF2-T UF830L-TM3-T UF830G-TM3-T UF830L-TMS-T UF830G-TMS-T UF830L-TN3-R UF830G-TN3-R UF830L-T2Q-T UF830G-T2Q-T UF830L-TQ2-R UF830G-TQ2-R UF830L-TQ2-T UF830G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-251 TO-251S TO-252 TO-262 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS GDS GDS...