Download UF830-F Datasheet PDF
Unisonic Technologies
UF830-F
UF830-F is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. - FEATURES - RDS(ON) <1.5Ω @ VGS=10V, ID=2.5A - Single Pulse Avalanche Energy Rated - Rugged- SOA is Power Dissipation Limited - Fast Switching Speeds - Linear Transfer Characteristics - High Input Impedance - SYMBOL Power MOSFET - ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UF830L-TA3-T UF830G-TA3-T TO-220 UF830L-TF3-T UF830G-TF3-T TO-220F UF830L-TMS-T UF830G-TMS-T TO-251S UF830L-TN3-R UF830G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS Packing Tube Tube Tube Tape Reel - MARKING .unisonic..tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A94.B Power MOSFET - ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL...