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UF830-F - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Features

  • RDS(ON).

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Datasheet preview – UF830-F

Datasheet Details

Part number UF830-F
Manufacturer Unisonic Technologies
File Size 263.30 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet UF830-F Datasheet
Additional preview pages of the UF830-F datasheet.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UF830-F 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON) <1.5Ω @ VGS=10V, ID=2.
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