UF830-E
UF830-E is N-CHANNEL POWER MOSFET manufactured by Unisonic Technologies.
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
- FEATURES
- RDS(ON) < 1.5Ω@ VGS=10V, ID=2.5A
- Single Pulse Avalanche Energy Rated
- Rugged- SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
Power MOSFET TO-220
- ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF830L-TA3-T
UF830G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment 123 GDS
Packing Tube
- MARKING
.unisonic..tw Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-993.B
Power MOSFET
- ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage (TJ=25°C ~125°C)
500 V
Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C)
VDGR
500 V
Gate to Source Voltage
VGS ±30...
