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UF830-E - N-CHANNEL POWER MOSFET

General Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.

Key Features

  • RDS(ON) < 1.5Ω@ VGS=10V, ID=2.5A.
  • Single Pulse Avalanche Energy Rated.
  • Rugged- SOA is Power Dissipation Limited.
  • Fast Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • SYMBOL 1 Power MOSFET TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UF830-E 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.  FEATURES * RDS(ON) < 1.5Ω@ VGS=10V, ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance  SYMBOL 1 Power MOSFET TO-220  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830L-TA3-T UF830G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 Pin Assignment 123 GDS Packing Tube  MARKING www.unisonic.com.