UF830-E Description
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
UF830-E Key Features
- RDS(ON) < 1.5Ω@ VGS=10V, ID=2.5A
- Single Pulse Avalanche Energy Rated
- Rugged- SOA is Power Dissipation Limited
- Fast Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- SYMBOL
- ORDERING INFORMATION
- MARKING