Datasheet Details
| Part number | UT2316 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 590.22 KB |
| Description | N-CHANNEL MOSFET |
| Download | UT2316 Download (PDF) |
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| Part number | UT2316 |
|---|---|
| Manufacturer | Unisonic Technologies |
| File Size | 590.22 KB |
| Description | N-CHANNEL MOSFET |
| Download | UT2316 Download (PDF) |
|
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|
The UTC UT2316 is N-channel enhancement mode Power MOSFET, designed in serried ranks with fast switching speed, low on-resistance and favorable stabilization.
Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free UT2316L-AA3-R UT2316G-AA3-R UT2316L-AE2-R UT2316G-AE2-R UT2316L-AE3-R UT2316G-AE3-R Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 SOT-23-3 SOT-23 Pin Assignment 1 2 3 G D S G S D G S D Packing Tape Reel Tape Reel Tape Reel MARKING SOT-23 SOT-223 www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-126.G UT2316 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (Note 3) ID Pulsed Drain Current (Note 1, 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS Total Power Dissipation (TA=25°C) SOT-23-3 SOT-23 SOT-223 PD 30 V ±20 V 3.6 A 16 A 66 mJ 0.5 W 0.6 W 1 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
UNISONIC TECHNOLOGIES CO., LTD UT2316 N-CHANNEL ENHANCEMENT MODE .
| Part Number | Description |
|---|---|
| UT2311 | P-Channel MOSFET |
| UT2312 | N-CHANNEL MOSFET |
| UT2301 | 20V P-CHANNEL MOSFET |
| UT2301Z | 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| UT2302 | N-Channel MOSFET |
| UT2304 | N-Channel MOSFET |
| UT2305 | 20V P-CHANNEL POWER MOSFET |
| UT2305A | P-Channel MOSFET |
| UT2306 | N-Channel MOSFET |
| UT2308 | N-Channel MOSFET |