UTT6N10Z Key Features
- RDS(on) < 108 mΩ @ VGS = 10V, ID=3.0A
- High Switching Speed
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: UTT6N10Z
- Manufacturer: Unisonic Technologies (official site)
- Size: 199.09 KB
Other UTT6N10Z Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
UTT6N10Z | N-Channel Power MOSFET |
UTT6N10Z Description
The UTC UTT6N10Z is a N-channel enhancement mode Power FET, it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching speed and ultra low gate charge. The UTC UTT6N10Z is usually used in DC-DC Converters.