• Part: CHA1008-99F
  • Manufacturer: United Monolithic Semiconductors
  • Size: 302.30 KB
Download CHA1008-99F Datasheet PDF
CHA1008-99F datasheet preview
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CHA1008-99F Key Features

  • Broadband performances: 80-105GHz
  • Balanced configuration
  • 16dB linear gain from 80 to 90GHz
  • 5dB noise figure from 80 to 90GHz
  • DC bias: VD=2.5V@ ID=115mA
  • Chip size 3.40x1.60x0.07mm
  • 27 Oct 20
  • Parc Mosaic
  • 10, Avenue du Québec
  • 91140 VILLEBON-SUR-YVETTE

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CHA1008-99F Description

The CHA1008-99F is a broadband, balanced, four-stage monolithic low noise amplifier. IN It is designed for Millimeter-Wave Imaging applications and can be use in mercial OUT digital radios and wireless LANs. The circuit is manufactured on a pHEMT process, 0.10µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.