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CHA1010-99F - 7-11GHz Low Noise Amplifier

General Description

The CHA1010-99F is a monolithic threestage wide-band low noise amplifier.

It is designed for a wide range of applications, from military to commercial IN communication systems.

Key Features

  • Broadband performance: 7-11GHz.
  • 1dB Noise Figure.
  • 32dB Linear Gain.
  • +5.5dBm Pout at 1dB gain compression.
  • DC bias: Vd=5Volt, Id=30mA.
  • Chip size 2.57x1.79x0.1mm -40°C, +25°C, +85°C Main Electrical Characteristics Tamb= +25°C. Vd = +5.0V Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB compression Min Typ Max Unit 7 11 GHz 32 dB 1.0 dB 5.5 dBm Ref. : DSCHA10100301 - 27 Oct 20 1/10 Specifications subjec.

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Datasheet Details

Part number CHA1010-99F
Manufacturer United Monolithic Semiconductors
File Size 881.08 KB
Description 7-11GHz Low Noise Amplifier
Datasheet download datasheet CHA1010-99F Datasheet

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CHA1010-99F 7-11GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1010-99F is a monolithic threestage wide-band low noise amplifier. It is designed for a wide range of applications, from military to commercial IN communication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. VG VD OUT Main Features ■ Broadband performance: 7-11GHz ■ 1dB Noise Figure ■ 32dB Linear Gain ■ +5.5dBm Pout at 1dB gain compression ■ DC bias: Vd=5Volt, Id=30mA ■ Chip size 2.57x1.79x0.1mm -40°C, +25°C, +85°C Main Electrical Characteristics Tamb= +25°C. Vd = +5.