CHA1010-99F Description
The CHA1010-99F is a monolithic threestage wide-band low noise amplifier. It is designed for a wide range of applications, from military to mercial IN munication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
CHA1010-99F Key Features
- Broadband performance: 7-11GHz
- 1dB Noise Figure
- 32dB Linear Gain
- +5.5dBm Pout at 1dB gain pression
- DC bias: Vd=5Volt, Id=30mA
- Chip size 2.57x1.79x0.1mm
- 40°C, +25°C, +85°C
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec