Datasheet Summary
7-11GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA1010-99F is a monolithic threestage wide-band low noise amplifier. It is designed for a wide range of applications, from military to mercial IN munication systems. The circuit is manufactured with a pHEMT process, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
VG VD
Main Features
- Broadband performance: 7-11GHz
- 1dB Noise Figure
- 32dB Linear Gain
- +5.5dBm Pout at 1dB gain pression
- DC bias: Vd=5Volt, Id=30mA
- Chip size 2.57x1.79x0.1mm
-40°C, +25°C, +85°C
Main Electrical Characteristics
Tamb= +25°C. Vd =...