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CHA1008-99F - 80-105GHz Balanced Low Noise Amplifier

General Description

amplifier.

digital radios and wireless LANs.

Key Features

  • Broadband performances: 80-105GHz.
  • Balanced configuration.
  • 16dB linear gain from 80 to 90GHz.
  • 5dB noise figure from 80 to 90GHz.
  • DC bias: VD=2.5V@ ID=115mA.
  • Chip size 3.40x1.60x0.07mm Gain & NF (dB) 20 Gain and Noise Figure 18 16 14 12 Gain NF 10 8 6 4 2 0 78 80 82 84 86 88 90 92 94 96 98 100 102 104 106 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain (from 80 to 90GHz) NF Noi.

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Datasheet Details

Part number CHA1008-99F
Manufacturer United Monolithic Semiconductors
File Size 302.30 KB
Description 80-105GHz Balanced Low Noise Amplifier
Datasheet download datasheet CHA1008-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA1008-99F 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1008-99F is a broadband, balanced, four-stage monolithic low noise amplifier. IN It is designed for Millimeter-Wave Imaging applications and can be use in commercial OUT digital radios and wireless LANs. The circuit is manufactured on a pHEMT process, 0.10µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Broadband performances: 80-105GHz ■ Balanced configuration ■ 16dB linear gain from 80 to 90GHz ■ 5dB noise figure from 80 to 90GHz ■ DC bias: VD=2.5V@ ID=115mA ■ Chip size 3.40x1.60x0.