CHA1008-99F Datasheet 80-105ghz Balanced Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA1008-99F 80-105GHz Balanced Low Noise Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA1008-99F
Manufacturer	United Monolithic Semiconductors
File Size	302.30 KB
Description	80-105GHz Balanced Low Noise Amplifier
Datasheet	CHA1008-99F-UnitedMonolithicSemiconductors.pdf

General Description

The CHA1008-99F is a broadband, balanced, four-stage monolithic low noise amplifier.

IN It is designed for Millimeter-Wave Imaging applications and can be use in commercial OUT digital radios and wireless LANs.

The circuit is manufactured on a pHEMT process, 0.10µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

Broadband performances: 80-105GHz.
Balanced configuration.
16dB linear gain from 80 to 90GHz.
5dB noise figure from 80 to 90GHz.
DC bias: VD=2.5V@ ID=115mA.
Chip size 3.40x1.60x0.07mm Gain & NF (dB) 20 Gain and Noise Figure 18 16 14 12 Gain NF 10 8 6 4 2 0 78 80 82 84 86 88 90 92 94 96 98 100 102 104 106 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain (from 80 to 90GHz) NF Noi.

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