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CHA1077 - W-Band Low Noise Amplifier

General Description

The CHA1077 is a W-band monolithic 3-stages low noise amplifier.

All the active devices are internally self-biased.

This chip is compatible with automatic equipment for assembly.

Key Features

  • n n n n n n n W-band low noise amplifier High gain Wide operating frequency range High temperature range On-chip self biasing Automatic assembly oriented Low DC power consumption n Chip size: 2.6x1.32x 0.1mm W-band amplifier block-diagram Main Characteristics Tamb = +25°C Symbol F_op G_lin NF P_1dB Parameter Operating frequency Small signal gain Noise figure Output power at 1dB Min 76 15 4.5 10 Typ Max 77 Unit GHz dB dB dBm ESD Protections : Electrostatic discharge sensitive device observe ha.

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Datasheet Details

Part number CHA1077
Manufacturer United Monolithic Semiconductors
File Size 133.16 KB
Description W-Band Low Noise Amplifier
Datasheet download datasheet CHA1077 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com CHA1077 PRELIMINARY W-band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA1077 is a W-band monolithic 3-stages low noise amplifier. All the active devices are internally self-biased. This chip is compatible with automatic equipment for assembly. The circuit is manufactured on P-HEMT process: 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. IN OUT +V -V Main Features n n n n n n n W-band low noise amplifier High gain Wide operating frequency range High temperature range On-chip self biasing Automatic assembly oriented Low DC power consumption n Chip size: 2.6x1.32x 0.