CHA2157-99F
Description
The CHA2157-99F is a two stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to mercial munication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process.
The circuit is manufactured with a p HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features
- 3.5 d B noise figure
- 10 d B 1d B gain
- 15 d Bm output power @ -1d B gain p.
- DC power consumption, 80m A @ 3.3V
- Chip size: 1.71 x 1.04 x 0.10 mm
Gain & Rloss (d B)
15 10 5 0 -5 -10 -15 -20
Gain S11
56 57 58 Frequency (GHz)
S22
59 60
Typical on wafer measurement
Main Characteristics
Tamb. = 25°C Symbol
Parameter
Min Typ Max
Fop Operating frequency range
G Small signal gain
NF Noise figure
3.5 4.5
P1d B Output power at 1d B gain pression
Id Bias current
80 150
ESD Protection:...
