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CHA2159-99F Datasheet Low Noise / Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA2159-99F 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number CHA2159-99F
Manufacturer United Monolithic Semiconductors
File Size 259.96 KB
Description Low Noise / Medium Power Amplifier
Download CHA2159-99F Download (PDF)

General Description

The CHA2159 is a four - stage low noise and medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounded.

Key Features

  • 4.0 dB noise figure.
  • 20 dB gain.
  • 14 dBm output power (-1dB gain comp. ).
  • DC power consumption, 115mA @ 3.5V.
  • Chip size: 2.35 x 1.11 x 0.10 mm Gain & RLosses (dB) 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 55 dBS11 dBS22 dBS21 NF Typ. 60 65 Frequency (GHz) Typical on wafer measurment Main Characteristics Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 55 65 GHz G Small signal gain 18 20 dB NF Nois.