CHA2159-99F Datasheet | United Monolithic Semiconductors

Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to mercial munication systems. The backside of the chip is both RF and DC grounded. This simplifies the assembly process. The circuit is manufactured with a p HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features - 4.0 d B noise figure - 20 d B gain - 14 d Bm output power (-1d B gain p.) - DC power consumption, 115m A @ 3.5V - Chip size: 2.35 x 1.11 x 0.10 mm Gain & RLosses (d B) 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 55 d BS11 d BS22 d BS21 NF Typ. Frequency (GHz) Typical on wafer measurment Main Characteristics Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit Fop Operating frequency range GHz Small signal gain 20 d B Noise figure 4.8 d B P1d B Output power at 1d B gain...