CHA2110-QDG Datasheet - United Monolithic Semiconductors

CHA2110-QDG GaAs Monolithic Microwave

The CHA2110-QDG is a monolithic two-stage wide band, self-biased Low Noise Amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, and air bri.

CHA2110-QDG Features

* Broadband performances: 7-12GHz

* Linear gain: 19dB

* Noise Figure: 1.2dB

* Output power @ 1dB comp.: 10dBm

* DC bias: Vd=4V @ Id=45mA

* 24L-QFN4x4

* MSL1 25 20 S21 5.5 5.0 15 4.5 10 4.0 5 3.5 0 3.0 -5 S22 S11 2.5 -10 2.0 -15 1.5 -20 NF 1.0 -25 0.

CHA2110-QDG-UnitedMonolithicSemiconductors.pdf

CHA2110-QDG Datasheet Preview — Preview of CHA2110-QDG PDF

Datasheet Details

Part number:

CHA2110-QDG

Manufacturer:

United Monolithic Semiconductors

File Size:

671.05 KB

Description:

Gaas monolithic microwave.

CHA2110-QDG Distributor

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CHA2110-QDG CHA2110-QDG GaAs Monolithic Microwave United Monolithic Semiconductors