CHA2190-99F - Low Noise Amplifier
GaAs Monolithic Microwave IC The circuit is a two-stages self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip for
CHA2190-99F Features
* Broad band performance 20-30GHz
* 2.2dB noise figure
* 15dB gain, 0.5dB gain flatness
* Low DC power consumption, 50mA
* 20dBm 3rd order intercept point
* Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) 18 14 10 6 2 -2 -6 dBS11 dBS21 dBS22 NF -10 -14 -18
