CHA2190-99F - Low Noise Amplifier

United Monolithic Semiconductors

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Datasheet Details

Part number	CHA2190-99F
Manufacturer	United Monolithic Semiconductors
File Size	307.50 KB
Description	Low Noise Amplifier
Datasheet	CHA2190-99F-UnitedMonolithicSemiconductors.pdf

CHA2190-99F Product details

Description

GaAs Monolithic Microwave IC The circuit is a two-stages self biased wide band monolithic low noise amplifier.The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.It is supplied in chip form.Main

Features

Broad band performance 20-30GHz.
2.2dB noise figure.
15dB gain,  0.5dB gain flatness.
Low DC power consumption, 50mA.
20dBm 3rd order intercept point.
Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) 18 14 10 6 2 -2 -6 dBS11 dBS21 dBS22 NF -10 -14 -18 -22 -26 14 16 18 20 22 24 26 28 30 32 34 36 Frequency ( GHz ) On wafer typical measurement Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit NF Noise figure at freq : 40GHz 2.

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Published: Jan 27, 2025 |