CHA2190-99F Datasheet - United Monolithic Semiconductors

CHA2190-99F Low Noise Amplifier

GaAs Monolithic Microwave IC The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip for.

CHA2190-99F Features

* Broad band performance 20-30GHz

* 2.2dB noise figure

* 15dB gain,  0.5dB gain flatness

* Low DC power consumption, 50mA

* 20dBm 3rd order intercept point

* Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) 18 14 10 6 2 -2 -6 dBS11 dBS21 dBS22 NF -10 -14 -18

CHA2190-99F-UnitedMonolithicSemiconductors.pdf