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CHA2110-QDG - GaAs Monolithic Microwave

General Description

The CHA2110-QDG is a monolithic two-stage wide band, self-biased Low Noise Amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

Key Features

  • Broadband performances: 7-12GHz.
  • Linear gain: 19dB.
  • Noise Figure: 1.2dB.
  • Output power @ 1dB comp. : 10dBm.
  • DC bias: Vd=4V @ Id=45mA.
  • 24L-QFN4x4.
  • MSL1 25 20 S21 5.5 5.0 15 4.5 10 4.0 5 3.5 0 3.0 -5 S22 S11 2.5 -10 2.0 -15 1.5 -20 NF 1.0 -25 0.5 -30 0.0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) Typical gain, input return losses, output return losses and Noise Figure (dB) versus frequency S21, input & output return losses.

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Datasheet Details

Part number CHA2110-QDG
Manufacturer United Monolithic Semiconductors
File Size 671.05 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA2110-QDG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2110-QDG 7-12 GHz LNA GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2110-QDG is a monolithic two-stage wide band, self-biased Low Noise Amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, and air bridges. It is supplied in RoHS compliant SMD package. UUMSS AA3261681780A YYYYWWWWG Main Features ■ Broadband performances: 7-12GHz ■ Linear gain: 19dB ■ Noise Figure: 1.2dB ■ Output power @ 1dB comp.: 10dBm ■ DC bias: Vd=4V @ Id=45mA ■ 24L-QFN4x4 ■ MSL1 25 20 S21 5.5 5.0 15 4.5 10 4.0 5 3.5 0 3.0 -5 S22 S11 2.5 -10 2.0 -15 1.5 -20 NF 1.0 -25 0.5 -30 0.