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CHA2159 - 55-65GHz Low Noise / Medium Power Amplifier

Datasheet Summary

Description

The CHA2159 is a four - stage low noise and medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounded.

Features

  • 4.0 dB noise figure.
  • 20 dB gain.
  • 14 dBm output power (-1dB gain comp. ).
  • DC power consumption, 115mA @ 3.5V.
  • Chip size: 2.35 x 1.11 x 0.10 mm Gain & RLosses (dB) 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 55 dBS11 dBS22 dBS21 NF Ty p. 60 Frequency (GHz) 65 Typical on Wafer Measurements Main Characteristics Tamb = +25°C, Vd = 3.5V Symbol Fop G NF P1dB Id Parameter Operating frequency range Small signal gain Noise figure Output power at 1dB gain compr.

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Datasheet Details

Part number CHA2159
Manufacturer United Monolithic Semiconductors
File Size 126.84 KB
Description 55-65GHz Low Noise / Medium Power Amplifier
Datasheet download datasheet CHA2159 Datasheet
Additional preview pages of the CHA2159 datasheet.

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Full PDF Text Transcription

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CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This simplifies the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ 4.0 dB noise figure ■ 20 dB gain ■ 14 dBm output power (-1dB gain comp.) ■ DC power consumption, 115mA @ 3.5V ■ Chip size: 2.35 x 1.11 x 0.
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