Click to expand full text
CHA5659-QXG
40-43.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5659-QXG is a four stage monolithic GaAs high power amplifier producing 1 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio or K-band SatCom applications. The CHA5659-QXG is recommended with the CHA3398-QDG as a driver. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package.
UMS A5659 YYWW
36 leads 6x5mm QFN package
Main Features
■ Broadband performances: 40-43.5GHz ■ 30dBm saturated power ■ 38.5dBm OIP3 ■ 20dB gain ■ DC bias: Vd = 6.0Volt @ Idq = 0.
CHA5659-QXG Datasheet
