CHA5659-QXG datasheet, amplifier equivalent, United Monolithic Semiconductors

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CHA5659-QXG Features and benefits

* Broadband performances: 40-43.5GHz
* 30dBm saturated power
* 38.5dBm OIP3
* 20dB gain
* DC bias: Vd = 6.0Volt @ Idq = 0.8A
* QFN5x6
* MSL3 .

CHA5659-QXG Application

The CHA5659-QXG is recommended with the CHA3398-QDG as a driver. The circuit is manufactured with a pHEMT process, 0.15.

CHA5659-QXG Description

The CHA5659-QXG is a four stage monolithic GaAs high power amplifier producing 1 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio.

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