CHA5012 X Band Driver Amplifier

United Monolithic Semiconductors

Description

CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC .
The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications.

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Datasheet Specifications

Part number: CHA5012
Manufacturer: United Monolithic Semiconductors
File Size: 532.81 KB
Datasheet: CHA5012_UnitedMonolithicSemiconductors.pdf
Description: X Band Driver Amplifier

Features

* Frequency band : 9.2-10.8 GHz
* Pout @3dB Gain compression : 29.5 dBm
* P. A. E @3dB Gain Compression : 40 %
* Two biasing modes:
* Digital control thanks to TTL interface
* Analog control thanks to biasing circuit
* Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @

Applications

* This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process:

CHA5012 Distributors

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CHA5012 Band Driver Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA5012-like datasheet