CHA5014-99F X Band HBT Driver Amplifier

United Monolithic Semiconductors

Description

CHA5014-99F X Band HBT Driver Amplifier GaAs Monolithic Microwave IC .
The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications.

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Datasheet Specifications

Part number: CHA5014-99F
Manufacturer: United Monolithic Semiconductors
File Size: 643.37 KB
Datasheet: CHA5014-99F-UnitedMonolithicSemiconductors.pdf
Description: X Band HBT Driver Amplifier

Features

* 30dBm Saturated output power
* Temperature compensated Output power
* Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit
* Quiescent bias point: 8.5V@230mA
* Chip size: 2.87 x 1.37 x 0.1mm3 Pout & PAE @ 1dBc and Linear Gain

Applications

* Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. A spe

CHA5014-99F Distributors

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CHA5014-99F Band HBT Driver Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA5014-99F-like datasheet