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CHA5014-99F Datasheet - United Monolithic Semiconductors

X Band HBT Driver Amplifier

CHA5014-99F Features

* 30dBm Saturated output power

* Temperature compensated Output power

* Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to Biasing circuit

* Quiescent bias point: 8.5V@230mA

* Chip size: 2.87 x 1.37 x 0.1mm3 Pout & PAE @ 1dBc and Linear Gain

CHA5014-99F General Description

The CHA5014-99F chip is a monolithic two-stage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to temperature. This device is manufactured using a GaInP HBT process, including, via holes through th.

CHA5014-99F Datasheet (643.37 KB)

Preview of CHA5014-99F PDF

Datasheet Details

Part number:

CHA5014-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

643.37 KB

Description:

X band hbt driver amplifier.

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TAGS

CHA5014-99F Band HBT Driver Amplifier United Monolithic Semiconductors

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