UF3N170400Z - JFET

UnitedSiC

General Description

United Silicon Carbide, Inc offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Key Features

Typical on-resistance RDS(on),typ of 400mΩ.
Voltage controlled.
Maximum operating temperature of 175°C.
Extremely fast switching not dependent on temperature.
Low gate charge.
Low intrinsic capacitance.
RoHS compliant Typical.

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UF3N170400Z jfet by UnitedSiC - Datasheet Preview

Datasheet Details

Part number	UF3N170400Z
Manufacturer	UnitedSiC
File Size	217.04 KB
Description	JFET
Datasheet	UF3N170400Z Datasheet

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X0AH X0A4H X0A1H X0A2H X0A3H DATASHEET UF3N170400Z 1700V-400mΩ SiC Normally-on JFET Preliminary, March 2019 Description United Silicon Carbide, Inc offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.