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DATASHEET
UF3N170400Z
1700V-400mΩ SiC Normally-on JFET
Preliminary, March 2019
Description
United Silicon Carbide, Inc offers the high-performance G3 SiC
normally-on JFET transistors. This series exhibits ultra-low on
resistance (RDS(ON)) and gate charge (QG) allowing for low conduction
and switching loss. The device normally-on characteristics with low
RDS(ON) at VGS = 0 V is also ideal for current protection circuits
without the need for active control, as well as for cascode operation.
Part Number
UF3N170400Z
UF3N170400
Package
Die on tape
Undiced wafer
Features
Typical on-resistance RDS(on),typ of 400mΩ
Voltage controlled
Maximum operating temperature of 175°C
Extremely fast switching not dependent on temperature
Low gate charge
Low intrinsic capacitance
RoHS compliant
Typical applications
Over Current Protection Circuits
DC-AC Inverters
Switch mode power supplies
Power factor correction modules
Motor drives
Induction heating
Datasheet: UF3N170400Z
Preliminary, March 2019
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