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UnitedSiC

UF3N170400Z Datasheet Preview

UF3N170400Z Datasheet

JFET

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X0AH X0A4H X0A1H X0A2H X0A3H
DATASHEET
UF3N170400Z
1700V-400mSiC Normally-on JFET
Preliminary, March 2019
Description
United Silicon Carbide, Inc offers the high-performance G3 SiC
normally-on JFET transistors. This series exhibits ultra-low on
resistance (RDS(ON)) and gate charge (QG) allowing for low conduction
and switching loss. The device normally-on characteristics with low
RDS(ON) at VGS = 0 V is also ideal for current protection circuits
without the need for active control, as well as for cascode operation.
Part Number
UF3N170400Z
UF3N170400
Package
Die on tape
Undiced wafer
Features
Typical on-resistance RDS(on),typ of 400m
Voltage controlled
Maximum operating temperature of 175°C
Extremely fast switching not dependent on temperature
Low gate charge
Low intrinsic capacitance
RoHS compliant
Typical applications
Over Current Protection Circuits
DC-AC Inverters
Switch mode power supplies
Power factor correction modules
Motor drives
Induction heating
Datasheet: UF3N170400Z
Preliminary, March 2019
1




UnitedSiC

UF3N170400Z Datasheet Preview

UF3N170400Z Datasheet

JFET

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X0AH X0A4H X0A1H X0A2H X0A3H
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 2,3
Pulsed drain current 3,4
Maximum junction temperature 5
Operating and storage temperature
Symbol
VDS
VGS
ID
IDM
TJ,max
TJ, TSTG
Test Conditions
DC
AC 1
TC = 25°C
TC = 100°C
TC = 25°C
1. +20V AC rating applies for turn-on pulses <200ns applied with external RG > 1.
2. Limited by TJ,max
3. Assumes a maximum junction-to-case thermal resistance of 2.2°C/W
4. Pulse width tp limited by TJ,max
5. Package limited
Value
1700
-20 to +3
-20 to +20
6.8
5.1
16
175
-55 to 175
Units
V
V
V
A
A
A
°C
°C
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Symbol
Test Conditions
Value
Units
Min Typ Max
Drain-source breakdown voltage
BVDS
VGS=-20V, ID=0.3mA
1700
V
Total drain leakage current
VDS=1700V,
IDSS
VGS=-20V, TJ=25°C
VDS=1700V,
VGS=-20V, TJ=175°C
2.2 60
µA
9
Total gate leakage current
VGS=-20V, TJ=25°C
IGSS
VGS=-20V, TJ=175°C
0.15
0.8
6
µA
µA
Drain-source on-resistance
Gate threshold voltage
Gate resistance
RDS(on)
VG(th)
RG
VGS=2V, ID=5A,
TJ=25°C
VGS=0V, ID=5A,
TJ=25°C
VGS=2V, ID=5A,
TJ=175°C
VGS=0V, ID=5A,
TJ=175°C
VDS=5V, ID=4.5mA
f=1MHz, open drain
-11
350
400
928
1040
-9
5
500
-7
m
V
Datasheet: UF3N170400Z
Preliminary, March 2019
2


Part Number UF3N170400Z
Description JFET
Maker UnitedSiC
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